Field effect semiconductor device with a low-noise drift layer a

Details Field effect semiconductor device with a low-noise drift layer a Field effect semiconductor device with a low-noise drift layer a

1995-11-10

1998-05-12

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257194, H01L 310328, H01L 310336

Patent

active

057510270

ABSTRACT:
A field effect semiconductor device includes an undoped In.sub.0.2 Ga.sub.0.8 As first low-noise drift layer, an undoped In.sub.x Ga.sub.1-x As (x=0.2-0) second low-noise drift layer and an n-type GaAs high-power drift layer in this order. The high-power drift layer includes a first high-power drift layer doped with n-type carrier at high concentration and a second high-power drift layer doped with n-type carrier at low concentration.

REFERENCES:
patent: 5373186 (1994-12-01), Schubert et al.
patent: 5404032 (1995-04-01), Sawada et al.
Sawada et al; "New Planar Two-Mode Channel . . . "; Appl. Phys. vol. 34 pp. 1168-1171, Feb. 1995.
Jpn. J. Appl. Phys. vol. 34(1995)pp. 1168-1171 Part 1, No. 2B, Feb. 1995 (Received Aug. 31, 1994).

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