Field-effect semiconductor device having heterojunction

Details Field-effect semiconductor device having heterojunction Field-effect semiconductor device having heterojunction

1996-05-17

1998-05-12

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257 24, 257192, H01L 310328, H01L 310336, H01L 31072, H01L 31109

Patent

active

057510296

ABSTRACT:
An undoped Al.sub.0.22 Ga.sub.0.78 As layer, an undoped In.sub.0.2 Ga.sub.0.8 As electron-drifting layer, and an undoped GaAs electron-supplying layer are formed in order on a GaAs substrate. An impurity-doped layer .delta.-doped with Si donor is formed in the GaAs electron-supplying layer. An n-Al.sub.0.22 Ga.sub.0.78 As layer and n.sup.+ -GaAs cap layers are formed in order on the GaAs electron-supplying layer. A source electrode and a drain electrode are formed on the n.sup.+ -GaAs cap layers and a gate electrode is formed on the n-Al.sub.0.22 Ga.sub.0.78 As layer.

REFERENCES:
patent: 5326995 (1994-07-01), Ohori
patent: 5373168 (1994-12-01), Ando et al.
patent: 5404032 (1995-04-01), Sawada et al.
Tekumitsu, Japanese Journal of Applied Physics vol. 29, No. 5, May 1990, pp. L698-L701.
Sawada et al, Japanese Journal of Applied Physics vol. 30, No. 12B, Dec. 1991, pp. 3837-3839.
Sawada et al.; IEEE Electron Device Letters vol. 14, No. 7, Jul. 1993.
Sawada et al., Japanese Journal of Applied Physics vol. 34, pp. 1168-1171, Part 1, No. 2B, Feb. 1995.
Matsushita et al., Extended Abstracts of the 1995 International Conference on Solid State Devices and Materials, Osaka, pp. 419-421 no month.

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