Field effect semiconductor device having dipole barrier

Details Field effect semiconductor device having dipole barrier Field effect semiconductor device having dipole barrier

1998-03-05

2000-11-21

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257217, 257243, 257279, 257282, 257376, 257394, H01L 2972

Patent

active

06150680&

ABSTRACT:
A field effect semiconductor device including a substrate, a dipole barrier formed on the substrate, a channel layer formed on the dipole barrier, and source, gate and drain electrodes formed on the channel layer. The dipole barrier provides a potential barrier and a maximum electric field sufficient to confine electrons to the channel layer.

REFERENCES:
patent: 4425573 (1984-01-01), Ristow
patent: 4740822 (1988-04-01), Itoh
patent: 4795717 (1989-01-01), Okamura
patent: 4814836 (1989-03-01), Thompson
patent: 4829346 (1989-05-01), Kasahara et al.
patent: 4843155 (1989-06-01), Chomczynski
patent: 4866490 (1989-09-01), Itoh
patent: 4908325 (1990-03-01), Berenz
patent: 4952527 (1990-08-01), Calawa et al.
patent: 5043777 (1991-08-01), Sriram
patent: 5087950 (1992-02-01), Katano
patent: 5164686 (1992-11-01), Shiga
patent: 5262660 (1993-11-01), Streit et al.
patent: 5270798 (1993-12-01), Pao et al.
patent: 5399886 (1995-03-01), Hasegawa
patent: 5399887 (1995-03-01), Weitzel et al.
patent: 5406099 (1995-04-01), Hiramatsu
patent: 5408111 (1995-04-01), Nakajima et al.
patent: 5410167 (1995-04-01), Saito
patent: 5411914 (1995-05-01), Chen et al.
patent: 5448085 (1995-09-01), Calcatera et al.
patent: 5448086 (1995-09-01), Hida
patent: 5459089 (1995-10-01), Baliga
patent: 5493136 (1996-02-01), Matsuzaki et al.
patent: 5504352 (1996-04-01), Tsutsui et al.
patent: 5504353 (1996-04-01), Kuzuhara
patent: 5539228 (1996-07-01), Chi
patent: 5578512 (1996-11-01), Tao
patent: 5693964 (1997-12-01), Ohta et al.
Shenai et al. ("Current Transport Mechanisms in Atomically Abrupt Metal-Semiconductor Interfaces", IEEE Transactions on Electron Devices, vol. 35, No. 4, Apr. 1988, pp. 468-482).
Kenji Hiruma et al.: "Dependence of GaAs-Al.sub.x Ga.sub.1-x A s Heterostructures on Al Composition For Metal-Semiconductor Field-Effect Transistor Operation" Journal of Applied Physics, vol. 66, No. 3, Aug. 1, 1989, pp. 1430-1443, XP000039863 see p. 1440, column 2, line 21, paragraph III line 25.
Hiromi Tsuji et al.: "A Sub-10 ps/gate Direct-Coupled FET Logic Circuit With 0.2 Um--Gate GaAs MESFET " Japaneses Journal of Applied Physics, vol. 29, No. 12 Part 02, Dec. 1, 1990, pp. L2438-L2441, XP000222808 see Figure 2.
Cho H -R et al.: "A New GaAs Field Effect Transistor (FET) With Dipole Barrier (DIB)" Japanese Journal of Applied Physics, vol. 33, No. 1B, Part 01, Jan. 1, 1994, pp. 775-778, XP000596422 see p. 775, paragraph 2; Figure 1A.
Ping A T et al.: "DC and Microwave Performance of High-Current AlGaN-GaN Heterostructure Field Effect Transistors Grown On p-Type SiC Substrates" IEEE Electron Device Letters, vol. 19, No. 2, Feb. 1, 1998, pp. 54-56, XP000727959 see abstract.

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