Field effect semiconductor device having an unsaturated triode v

Details Field effect semiconductor device having an unsaturated triode v Field effect semiconductor device having an unsaturated triode v

1975-05-12

1979-04-17

Wojciechowicz, Edward J.

357 12, 357 23, H01L 2988, H01L 2980, H01L 2978

Patent

active

RE0299715

ABSTRACT:
A field effect transistor comprises a semiconductor channel, a source and a drain electrode formed at the opposite ends of the channel and a gate electrode provided on the side of the channel. The channel has a small impurity density and therefore the depletion layer extending from the gate goes deep into the channel to substantially close the conductive portion of the channel even in the absence of a gate voltage. The drain current will not flow where the drain voltage is below a certain threshold voltage, and will flow where the drain [volage] voltage is above the threshold voltage exhibiting a substantially linear resistance characteristic. This drain-current to drain-voltage characteristic simulates the anode-current to anode-voltage characteristic of the triode vacuum tube very closely.

REFERENCES:
patent: 3344324 (1967-09-01), Beale
patent: 3366802 (1968-01-01), Hilbiber
patent: 3578514 (1971-05-01), Lesk
patent: 3667010 (1972-05-01), Rindner et al.
patent: 3693055 (1972-09-01), Beneking

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