Field effect semiconductor device having a reduced leakage curre

Details Field effect semiconductor device having a reduced leakage curre Field effect semiconductor device having a reduced leakage curre

1997-12-29

1999-05-04

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 24, 257192, 257194, 257195, 257284, H01L 310328, H01L 310336, H01L 31072, H01L 31109

Patent

active

059006412

ABSTRACT:
A field-effect transistor including a channel layer, a source electrode, a drain electrode, a high-resistance layer provided on the channel layer between the source electrode and the drain electrode and a gate electrode provided in an opening formed in the high-resistance layer, wherein the high-resistance layer is defined by a first side-wall facing the source electrode and a second side-wall facing the drain electrode, such that the first side-wall is separated from the source electrode.

REFERENCES:
patent: 5161235 (1992-11-01), Shur et al.
patent: 5583355 (1996-12-01), Bernhardt et al.
patent: 5672890 (1997-09-01), Nakajima
patent: 5739557 (1998-04-01), O'Neil, II et al.
patent: 5739558 (1998-04-01), Ishida et al.
patent: 5789767 (1998-08-01), Omura

Affiliated with

Also associated with

Rating

Field effect semiconductor device having a reduced leakage curre does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field effect semiconductor device having a reduced leakage curre, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field effect semiconductor device having a reduced leakage curre will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1871106