Field effect semiconductor device having a protective diode with

Details Field effect semiconductor device having a protective diode with Field effect semiconductor device having a protective diode with

1980-05-21

1984-03-20

Clawson, Jr., Joseph E.

357 23, 357 13, 357 51, H01L 2702

Patent

active

044384491

ABSTRACT:
A semiconductor device comprising a semiconductor element having an insulated gate electrode and a protective diode region provided in the neighborhood of the semiconductor element to protect the gate electrode from a dielectric breakdown; the diode is formed by a low resistivity semiconductor material to reduce its internal resistance, thereby accelerating the action of the protective diode so that the clamp action of the diode occurs earlier than the dielectric breakdown of the gate electrode.

REFERENCES:
patent: 3210620 (1965-10-01), Lin
patent: 3244949 (1966-04-01), Hilbiber
patent: 3315096 (1967-04-01), Carlson et al.

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