Field-effect semiconductor device comprising an ancillary electr

Details Field-effect semiconductor device comprising an ancillary electr Field-effect semiconductor device comprising an ancillary electr

1988-07-28

1990-12-11

Wojciechowicz, Edward J.

357 15, 357 2314, 357 41, 357 46, H01L 2980

Patent

active

049774344

ABSTRACT:
A field-effect transistor comprises an ancillary electrode in addition to the source, gate and drain electrodes. In this device, a semiconducting body bears source, gate and drain metallizations which define a main transistor. The metallization of the drain is separated into two parts which are separated by a channel on which is placed a second gate metallization defining a secondary transistor. The two parts of the drain are coupled by this secondary transistor, the channel of which is separated from the main channel. The secondary transistor can be used to control the gain of the main transistor or to modulate its amplitude signal or to mix two frequencies addressed on the two gates.

REFERENCES:
patent: 4141023 (1979-02-01), Yamada
patent: 4313126 (1982-01-01), Krumm et al.
1978 IEEE MTT-S International Microwave Symposium Digest, Ottawa, Canada, Jun. 27-29, 1978, pp. 309-311, IEEE, N.Y., US Chen, et al.

Affiliated with

Also associated with

Rating

Field-effect semiconductor device comprising an ancillary electr does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field-effect semiconductor device comprising an ancillary electr, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field-effect semiconductor device comprising an ancillary electr will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-392568