Field-effect semiconductor device and method for making the...

Details Field-effect semiconductor device and method for making the... Field-effect semiconductor device and method for making the...

2007-07-17

2007-07-17

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S769000, C257SE29246, C257SE29249

Reexamination Certificate

active

11038255

ABSTRACT:
A method for making a filed-effect semiconductor device includes the steps of forming a gate electrode on a semiconductor layer composed of a gallium nitride-based compound semiconductor represented by the formula AlxInyGa1−x−yN, wherein x+y=1, 0≦x≦1, and 0≦y≦1; and forming a source electrode and a drain electrode by self-alignment using the gate electrode as a mask. A field-effect semiconductor device fabricated by the method is also disclosed.

REFERENCES:
patent: 5053348 (1991-10-01), Mishra et al.
patent: 6072203 (2000-06-01), Nozaki et al.
patent: 6448648 (2002-09-01), Boos
patent: 6492669 (2002-12-01), Nakayama et al.
patent: 6573599 (2003-06-01), Burton et al.
patent: 2001/0023964 (2001-09-01), Wu et al.
patent: 2001-102565 (2001-04-01), None

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