Field effect semiconductor device and its manufacturing method

Details Field effect semiconductor device and its manufacturing method Field effect semiconductor device and its manufacturing method

1990-11-01

1991-07-23

Wojciechowicz, Edward J.

Fishing, trapping, and vermin destroying

357 234, 357 59, 357 68, 357 67, 357 71, 437 29, 437 41, H01L 2978, H01L 21265

Patent

active

050347918

ABSTRACT:
In a semiconductor integrated circuit device using a field effect transistor, such as MOS, having the end part of the drain overlapped with the gate electrode, a novel gate-drain overlap structure of excellent performance and reliability is presented. A manufacturing method for this device is also presented.

REFERENCES:
patent: 4920391 (1990-04-01), Uchida

Affiliated with

Also associated with

Rating

Field effect semiconductor device and its manufacturing method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field effect semiconductor device and its manufacturing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field effect semiconductor device and its manufacturing method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-436217