Field-effect semiconductor device

Details Field-effect semiconductor device Field-effect semiconductor device

2007-04-24

2007-04-24

Richards, N. Drew (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S192000

Reexamination Certificate

active

09658732

ABSTRACT:
The field-effect semiconductor device includes a channel layer; a contact layer; a semiconductor structure having an electron-affinity different from those of the channel layer and the contact layer and formed between the channel layer and the contact layer; an ohmic electrode formed on the contact layer; and a Schottky electrode formed on the semiconductor structure. The junction face between the channel layer and the semiconductor structure and the junction face between the contact layer and the semiconductor structure are iso-type heterojunctions.

REFERENCES:
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Makoto Inai, et al. “Doped Channel HFET with Effective Lateral Energy Modulation for High Power Enhancement Operation”, Extended Abstracts of the 1998 International Conference on Solid State Devices and Materials, Hiroshima, 1998, pp. 328-329.
M. Sawada, et al. “A Super Low-Noise AlGaAs/InGaAs/GaAs DC-HFET with 0.15 μm Gate-Length”, Japanese Journal of Applied Physics, Supplements, Extended Abstracts of the 1991 International Conference on Solid State Devices and Materials (SSDM '91), Yokohama, Japan, Aug. 27-29, 1991, pp. 353-355; and.
P. P. Ruden, et al., “AlGaAs/InGaAs/GaAs Quantum Well Doped Channel Heterostructure Field Effect Transistors”, IEEE Transactions on Electron Devices, vol. 37, No. 10, Oct. 1990, pp. 2171-2175.
Japanese Examination Report dated Aug. 6, 2002, along with an English translation.

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