Field-effect semiconductor device

Details Field-effect semiconductor device Field-effect semiconductor device

2011-07-26

2011-07-26

Tran, Tan N (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S197000, C257S205000, C257S273000, C257S361000, C257SE29246

Reexamination Certificate

active

07985987

ABSTRACT:
A HEMT-type field-effect semiconductor device has a main semiconductor region comprising two layers of dissimilar materials such that a two-dimensional electron gas layer is generated along the heterojunction between the two layers. A source and a drain electrode are placed in spaced positions on a major surface of the main semiconductor region. Between these electrodes, a gate electrode is received in a recess in the major surface of the main semiconductor region via a p-type metal oxide semiconductor film whereby a depletion zone is normally created in the electron gas layer, with a minimum of turn-on resistance and gate leak current.

REFERENCES:
patent: 5276340 (1994-01-01), Yokoyama et al.
patent: 7449762 (2008-11-01), Singh
patent: 7859021 (2010-12-01), Kaneko
patent: 2004-273486 (2004-09-01), None
patent: 2006-222414 (2006-08-01), None
patent: WO 03/071607 (2003-08-01), None

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