1988-05-02
1989-07-04
Clawson, Jr., Joseph E.
357 22, 357 67, 357 68, 357 71, H01L 2948
Patent
active
048455342
ABSTRACT:
A field effect semiconductor device having a compound semiconductor substrate e.g. GaAs, GaAlAs and the like, having an active region, and a gate electrode of one or more silicides of one or more refractory metals varying the composition or compositions thereof along the height of the gate electrode, resultantly varying the etching rate thereof along the height of the gate electrode. The gate electrode having a shorter length of the portion contacting the active region than of the portion remote from the active region, realized by the foregoing difference in etching rate. The gate electrode is preferably lined with a metal having a large conductivity. A pair of source and drain electrodes are produced on the active region, resultantly the field effect semiconductor device has a fast operation speed so as to be appropriate for super high frequency circuits.
REFERENCES:
patent: 4196439 (1980-04-01), Niehaus et al.
patent: 4393578 (1983-07-01), Cady et al.
H. Darley et al., "Opt. of Self-Aligned . . . Dimensions," 1980 IEEE IEDM Conf. Proc., Dec. 1980, pp. 34-37.
V. Rideout, "Fab, Meth for H-Perf. MESFET," IBM Tech. Discl. Bull., vol. 23, #8B, Jan. 80, pp. 3861-3863.
S. Murarka, "Refr. Silicides for ICs," J. Vac. Sci. Tech., vol. 17, #4, Jul./Aug. 1980, pp. 775-792.
IEEE Transactions on Electron Devices, "Submicrometer Gate Fabrication of GaAs MESFET by Plasma Etching", by S. Takahashi et al., vol. ED-25, No. 10, Oct. 1978.
International Electron Devices Meeting, "Phosphorus Doped Molybdenum Silicide for LSI Applications", by S. Inoue et al., p. 153, 1980.
Extended Abstracts of the Journal of the Electrochemical Society, "Plasma Etching of Composite Silicide Gate Electrodes", by F. R. White et al., 1980.
Clawson Jr. Joseph E.
Fujitsu Limited
LandOfFree
Field effect semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Field effect semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field effect semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-856206