Field effect semiconductor device

Details Field effect semiconductor device Field effect semiconductor device

1976-05-13

1977-03-29

Wojciechowicz, Edward J.

357 41, 357 45, 357 46, 357 55, 357 68, H01L 2980, H01L 2702, H01L 2710, H01L 2906

Patent

active

040152782

ABSTRACT:
A high power field effect semiconductor device in which the gate length per given area of a semiconductor substrate is great and a channel is formed to extend from the main surface of the semiconductor substrate toward the other main surface to make current density as uniform as possible to thereby provide a high output power and which has a construction to allow ease in the attachment of electrodes.

REFERENCES:
patent: 3681220 (1972-08-01), Chizinsky
patent: 3764865 (1973-10-01), Napoli et al.
patent: 3783349 (1974-01-01), Beasom

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