Field-effect semiconductor device

Details Field-effect semiconductor device Field-effect semiconductor device

1987-09-30

1988-06-14

Edlow, Martin H.

Amplifiers

Signal feedback

Combined with control of bias voltage of signal amplifier

357 55, 357 22, 357 74, 357 80, 330307, 330277, 330107, H01L 2702, H01L 2906, H01L 2980, H03F 314

Patent

active

047515627

ABSTRACT:
A field-effect semiconductor device including a through-hole electrode formed so as to penetrate from the top to the bottom of the semiconductor substrate, a dielectric film formed on the semiconductor substrate so as to be opposite to the through-hole electrode, and an electrode, forming a through-hole type of passive element, such as a capacitor, so as to improve the integration degree.

REFERENCES:
patent: 3969745 (1976-07-01), Blocker, III
patent: 3986196 (1976-10-01), Decker et al.
patent: 4183041 (1980-01-01), Goel
patent: 4456888 (1984-06-01), Ayasli
Archer et al.; I.E.E.E. Journal of Solid-State Circuits; vol. SC-16; No. 6; Dec. 1981; pp. 648-652.

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