Field-effect semiconductor device

Details Field-effect semiconductor device Field-effect semiconductor device

1995-09-19

1998-09-15

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257284, 257192, H01L 2980, H01L 310328

Patent

active

058083324

ABSTRACT:
A depletion layer forming element, for instance, a low impurity concentration layer, is provided between a gate electrode and a source or drain electrode. The depletion layer forms a surface depletion layer closer to a semiconductor substrate than a depletion layer formed in an active layer opposite the gate electrode. Alternatively, the depletion layer forming element is a reduced thickness portion of the active layer.

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patent: 5266506 (1993-11-01), Green, Jr.
patent: 5404032 (1995-04-01), Sawada et al.
patent: 5532507 (1996-07-01), Wada
Aucoin et al., "Large Periphery, High Power Pseudomorphic HEMTS", GaAs IC Symposium Technical Digest, 1993, pp. 351-353, No Month.
Macksey, "Optimization Of The n.sup.+ Ledge Channel Structure For GaAs Power FET's", IEEE Transactions on Electron Devices, vol. ED-33, No. 11, 1986, pp. 1818-1824, No Month.

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