Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent
1995-09-01
1996-10-29
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
257194, 257280, H01L 310328, H01L 310336, H01L 2980
Patent
active
055699430
ABSTRACT:
A heterostructure semiconductor device having source and drain electrodes sistively coupled to opposite ends of a channel, a barrier layer on one side of the channel, a delta doped layer in the channel or within a given distance of it, a gate electrode on the barrier so as to form a Schottky diode and at least one collector electrode mounted on said barrier layer. The collector electrode or electrodes can be resistively coupled to the barrier layer, but preferably the coupling is such as to form a Schottky diode. Changes to the gate bias affect the source current through the field effect mechanism. The collector current depends on the transfer of heated, energized carriers out of the channel over the front heterobarrier. At low gate bias, electrons entering the source travel to the drain while none travel to the collector. Energized carriers are localized to the depletion region due its high electric field drop. At an intermediate gate bias, source current is increased and the voltage drop along the channel shifts more toward the region below the collector. Some heated carriers are then present at the collector's barrier and transfer out of the channel to the collector. At high bias, carrier heating in the channel causes a large fraction of electrons from the source to transfer to the collector. With a rising gate voltage the drain current goes through a smooth peaking and reduction while the collector current rises monotonically.
REFERENCES:
patent: 4641161 (1987-02-01), Kim et al.
patent: 4882609 (1989-11-01), Schubert et al.
patent: 5323030 (1994-06-01), Koscica et al.
patent: 5455441 (1995-10-01), Awano
Koscica Thomas E.
Zhao Jian H.
Anderson William H.
Fahmy Wael
The United States of America as represented by the Secretary of
Zelenka Michael
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