Field effect power transistor

Details Field effect power transistor Field effect power transistor

2005-04-29

2010-06-15

Fahmy, Wael (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Temperature

C257S470000, C257SE23080

Reexamination Certificate

active

07737521

ABSTRACT:
A power transistor is disclosed. In one embodiment, the power transistor has a cell array including a semiconductor body having a plurality of transistor cells with gate electrodes and with body and source electrode regions and at least one temperature sensing device integrated in the semiconductor body. The temperature sensing device is formed in a selected sense zone within the cell array, and the transistor cells lying in at least one zone of the cell array that is directly adjacent to the sense zone have an increased W/L ratio of their channel width (W) to their channel length (L) compared with the other transistor cells of the cell array.

REFERENCES:
patent: 5095343 (1992-03-01), Klodzinski et al.
patent: 5642252 (1997-06-01), Sakamoto et al.
patent: 6144085 (2000-11-01), Barker
patent: 6222232 (2001-04-01), Magri' et al.
patent: 6806533 (2004-10-01), Henninger et al.
patent: 2004/0113179 (2004-06-01), Pfirsch et al.

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