Field effect pentode transistor

Details Field effect pentode transistor Field effect pentode transistor

1977-02-07

1978-08-01

Wojciechowicz, Edward J.

357 22, 357 55, 357 68, H01L 2980

Patent

active

041046730

ABSTRACT:
A field effect pentode transistor, which provides a gain over an extremely broad band of frequencies is disclosed. The transistor has source and drain electrodes defined by ohmic contacts, a first gate input control electrode defined by a Schottky-barrier, a screen electrode, and a second control gate Schottky-barrier electrode. The screen electrode is an ohmic contact located between the first and second gate control electrodes; and the second control electrode is located between the screen electrode and the drain electrode.

REFERENCES:
patent: 3634702 (1972-01-01), Drangeid
patent: 3699408 (1972-10-01), Shinoda et al.

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