Field-effect microelectronic device, capable of forming one...

Details Field-effect microelectronic device, capable of forming one... Field-effect microelectronic device, capable of forming one...

2011-03-08

2011-03-08

Menz, Douglas M (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S401000

Reexamination Certificate

active

07902575

ABSTRACT:
The invention relates to a field-effect microelectronic device, as well as the method of production thereof. The device includes a substrate as well as at least one improved structure capable of forming one or more transistor channels. This structure, formed by a plurality of bars stacked on the substrate, can make it possible to save space in the integration of field-effect transistors as well as to improve the performance thereof.

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Kim, Sung-Min et al., “A Novel MBC (Multi-Bridge-Channel) MOSFET: Fabrication Technologies and Characteristics”, Silicon Nanoelectrics Workshop, pp. 18-19, 2003.

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