Field effect devices formed from porous semiconductor materials

Details Field effect devices formed from porous semiconductor materials Field effect devices formed from porous semiconductor materials

1993-06-02

1994-10-25

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257263, 257270, 257279, 257622, H01L 2980, H01L 2906

Patent

active

053592140

ABSTRACT:
A field effect transistor device constructed in accordance with the present invention includes a channel of semiconductive material such as silicon having at least one row of pores extending therethrough. Internal pn junctions are fabricated within the porous region, such that the inside of each pore is coated with a layer of opposite conductivity type semiconductive material. When voltage is applied to the internal pn-junctions, the space charge around the pores widens or contracts, depending upon the direction of the bias, thereby permitting the modulation of current flow through the channel.

REFERENCES:
patent: 4482907 (1984-11-01), Jay
patent: 5111254 (1992-05-01), Levinson et al.

Affiliated with

Also associated with

Rating

Field effect devices formed from porous semiconductor materials does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field effect devices formed from porous semiconductor materials, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field effect devices formed from porous semiconductor materials will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-137628