Field effect devices and their fabrication

Details Field effect devices and their fabrication Field effect devices and their fabrication

1979-05-31

1982-03-23

Ozaki, G.

Metal treatment

Stock

Ferrous

29571, 29580, 29589, 29590, 148171, 148175, 357 15, 357 4, 357 68, H01L 2120, H01L 21302, H01L 2980

Patent

active

043216137

ABSTRACT:
A method of fabricating a field effect transistor comprising the steps of forming an active layer of semiconductor material, e.g. GaAs over the surface of a first substrate of semiconductor material, e.g., also GaAs, forming source, drain and gate electrodes over the surface of the active layer, applying a second substrate of insulating material to the surface of this structure, and removing the first substrate. To facilitate the removal of the GaAs first substrate by selective etching, a buffer layer of GaAlAs resistant to the GaAs etchant may be formed between the first substrate and active layer, which buffer layer is removed, following removal of the first substrate, using a selective etchant to which the GaAs active layer is resistant. A second gate electrode may be formed on the active layer following removal of the first substrate. The technique is particularly applicable to high frequency FET devices.

REFERENCES:
patent: 3621565 (1971-11-01), Sandstrom et al.
patent: 3823467 (1974-07-01), Shamash et al.
patent: 3914137 (1975-10-01), Huffman et al.
patent: 3930912 (1976-01-01), Wisbey
patent: 3972770 (1976-08-01), Stein
patent: 4048712 (1977-09-01), Buiatti
patent: 4049488 (1977-09-01), Tijburg
patent: 4136352 (1979-01-01), Moutou et al.
patent: 4193836 (1980-03-01), Youmans et al.

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