Field effect devices

Details Field effect devices Field effect devices

1993-10-12

1999-11-16

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257192, H01L 310328, H01L 310336, H01L 31072, H01L 31109

Patent

active

059862912

ABSTRACT:
The channel region of the FET device has a first portion adjacent the source which has a higher bandgap energy or a higher electron affinity than a remaining portion of the channel. A quasi-electric field in the channel near the source is intensified and as a result, accelerates charge carriers in the channel and increases switching speed. An infrared controlled FET device is also disclosed in which a low bandgap channel layer has a large bandgap layer deposited on it to result in a conduction band discontinuity at the junction between the large bandgap semiconductor layer and the low bandgap channel layer and a two-dimensional electron gas (2DEG) channel in the low bandgap channel layer so that photons reaching the 2DEG eject charges and allow conduction through the channel layer.

REFERENCES:
patent: 4468851 (1984-09-01), Wieder et al.
patent: 4558337 (1985-12-01), Saunier et al.
patent: 4600932 (1986-07-01), Norris
patent: 4866490 (1989-09-01), Itoh

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