Field-effect devices

Details Field-effect devices Field-effect devices

1978-12-15

1981-05-26

James, Andrew J.

357 23, 357 59, 357 51, H01L 2978, H01L 2940, H01L 2702

Patent

active

042701376

ABSTRACT:
A field-effect device, e.g. an insulated-gate field-effect transistor has field-relief means in the form of a polycrystalline silicon or other resistance layer connected between its gate and drain electrode to permit during operation of the device the formation of a potential distribution (V.sub.G, V.sub.D) along the resistance layer. The resistance layer and its potential distribution extend over the current path in a low-doped drain zone to permit a high drain breakdown voltage without an unacceptable increase in drain series resistance or unacceptable decrease in transconductance.

REFERENCES:
patent: 3946418 (1976-03-01), Sigsbee
patent: 4009483 (1977-02-01), Clark
patent: 4035829 (1977-07-01), Ipri et al.
patent: 4172260 (1979-10-01), Okabe et al.

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