Field effect device with polycrystalline silicon channel

Details Field effect device with polycrystalline silicon channel Field effect device with polycrystalline silicon channel

1990-05-31

1992-08-04

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 46, 437 48, 437 52, 437 59, 437 60, 437915, H01L 2144

Patent

active

051358883

ABSTRACT:
A CMOS SRAM cell has a polycrystalline silicon signal line between a common node, which is the data storage node, and the power supply. A field effect device is fabricated within this polycrystalline silicon signal line. The channel of the field effect device is separated from an active area in the substrate by a thin gate dielectric, and the active region within the substrate functions as the control gate for the field effect device. Such a device can be used to provide polycrystalline silicon P-channel transistors for use in CMOS SPRAM cells.

REFERENCES:
patent: 4916665 (1990-04-01), Atruni et al.
patent: 4918510 (1990-04-01), Pfiester
patent: 4921813 (1990-05-01), Madan

Affiliated with

Also associated with

Rating

Field effect device with polycrystalline silicon channel does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field effect device with polycrystalline silicon channel, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field effect device with polycrystalline silicon channel will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-778138