Superconductor technology: apparatus – material – process – High temperature devices – systems – apparatus – com- ponents,... – Semiconductor thin film device or thin film electric...
Patent
1994-05-04
1995-03-28
James, Andrew J.
Superconductor technology: apparatus, material, process
High temperature devices, systems, apparatus, com- ponents,...
Semiconductor thin film device or thin film electric...
505234, 505330, 505701, 505780, 505873, 257 38, 257 39, H01L 3900, H01L 3914, H01L 3922
Patent
active
054017149
ABSTRACT:
A field-effect structure formed on a substrate and comprising a channel with source and drain as well as a gate that is separated from the channel by an insulating layer. The channel is made of a high T.sub.c metal-oxide superconductor, e.g., YBaCuO, having a carrier density of about 10.sup.21 /cm.sup.3 and a correlation length of about 0.2 nm. The channel thickness is preferrable in the order of 1 nm. The superconductor is preferably a single crystalline and oriented such that the superconducting behavior is strongest in the plane parallel to the substrate. With a signal of a few volts applied to the gate, the entire channel cross-section is depleted of charge carriers whereby the channel resistance can be switched between a "zero resistance" (undepleted, superconducting) state and "very high resistance" (depleted state).
REFERENCES:
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Chaudhari Preveen
Mueller Carl A.
Wolf Hans P.
International Business Machines - Corporation
James Andrew J.
Morris Daniel P.
Tang Alice W.
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