Field effect device maintaining a high speed operation in a high

Details Field effect device maintaining a high speed operation in a high Field effect device maintaining a high speed operation in a high

1987-09-28

1989-09-12

James, Andrew J.

357 15, 357 16, H01L 2980

Patent

active

048664901

ABSTRACT:
A field effect transistor comprises a gate electrode applied with a gate voltage, a channel forming region forming a channel in response to the gate voltage, and source and drain regions formed on both sides of the channel forming region, respectively, the channel forming region being made of a semiconductor material having an electron affinity which decreases as the distance from one surface thereof increases. The channel is formed at the surface of the channel forming region. An additional semiconductor material having an electron affinity lower than the electron affinity at the surface of the channel forming region may be interposed between the gate electrode and the channel forming region.

REFERENCES:
patent: 4424525 (1984-01-01), Mimura
patent: 4558337 (1985-12-01), Saunier et al.
patent: 4740822 (1988-04-01), Itoh
"(Invited)" MBE-Grown GaAs/N-AlGaAs Heterostructures and Their Application to High Electron Mobility Transistors, Hiyamizu et al., Japanese Journal of Applied Physics, vol. 21, Supplement 21-1, pp. 161-168, (1982).
"Low Noise Normally on and Normally Off Two-Dimensional Electron Gas Field-Effect Transistors", Laviron et al., Applied Physics Letters 40(6), pp. 530-532, (Mar. 15, 1982).
"A New Al.sub.0.3 Ga.sub.0.7 AS/GaAs Modulation-Doped FET", Kopp et al., IEEE Electron Device Letters, vol. EDL-3, No. 5, pp. 109-111, (May 1982).

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