Field effect device maintaining a high speed operation in a high

Details Field effect device maintaining a high speed operation in a high Field effect device maintaining a high speed operation in a high

1985-04-18

1988-04-26

James, Andrew J.

357 232, 357 22, 357 16, 357 41, H01L 2978

Patent

active

047408227

ABSTRACT:
A field effect transistor comprises a gate electrode applied with a gate voltage, a channel forming region forming a channel in response to the gate voltage, and source and drain regions formed on both sides of the channel forming region, respectively, the channel forming region being made of a semiconductor material having an electron affinity which decreases as the distance from one surface thereof increases. The channel is formed at the surface of the channel forming region. An additional semiconductor material having an electron affinity lower than the electron affinity at the surface of the channel forming region may be interposed between the gate electrode and the channel forming region.

REFERENCES:
patent: 4424525 (1984-01-01), Mimura
patent: 4558337 (1985-12-01), Saunier et al.

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