Field effect controlled, bipolar power semiconductor component w

Details Field effect controlled, bipolar power semiconductor component w Field effect controlled, bipolar power semiconductor component w

1989-02-22

1990-12-04

Mintel, William

357 39, 357 34, 357 234, 357 67, 357 86, 357 51, 357 59, H01L 2974

Patent

active

049757822

ABSTRACT:
In an IGT (Insulated Gate Transistor), the short-circuiting between the n-type regions (5c) and the p-type regions (4b) of the n-type emitter layer or p-type base layer respectively is produced by a buried conducting layer (12), specifically in the form of a metal silicide layer. Regardless of the spacing between cathode contact (8) and gate (7), the length of the n-type regions (5c) can thereby be reduced to such an extent that latching-up of the component is virtually impossible.

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