Field-effect-controllable semiconductor component with a plurali

Details Field-effect-controllable semiconductor component with a plurali Field-effect-controllable semiconductor component with a plurali

1996-09-18

1999-11-30

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Temperature

257337, 257470, H01L 31058, H01L 2976

Patent

active

059947527

ABSTRACT:
A field-effect-controllable power semiconductor component, such as a power MOSFET or IGBT, includes a semiconductor body, at least one cell field, a multiplicity of mutually parallel-connected transistor cells disposed in the at least one cell field, and at least two temperature sensors integrated in the semiconductor body and disposed at different locations from each other on the semiconductor body. Thus a temperature gradient between a strongly heated local region of the semiconductor body and one of the temperature sensors is reduced and a response time in the event of an overload is shortened.

REFERENCES:
patent: 5434443 (1995-07-01), Kelly et al.
patent: 5521421 (1996-05-01), Furuhata
"On Chip Temperature Sensor", IBM Technical Disclosure Bulletin, vol. 36, No. 8, Aug. 1993, pp. 489-491.

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