Field effect-controllable power semiconductor component with tem

Details Field effect-controllable power semiconductor component with tem Field effect-controllable power semiconductor component with tem

1996-12-20

1998-10-27

Callahan, Timothy P.

Miscellaneous active electrical nonlinear devices, circuits, and

External effect

Temperature

257341, 257370, 257378, 257467, H01L 3500

Patent

active

058282637

ABSTRACT:
A temperature sensor contains a bipolar transistor adjacent a cell array of a power MOSFET or IGBT. In order to detect temperature independently of a voltage drop across the power semiconductor component, a zone of the same conduction type is disposed between the cell array and a base zone. That zone is connected to a fixed bias voltage.

REFERENCES:
patent: 4622476 (1986-11-01), Venkatesh
patent: 4875131 (1989-10-01), Leipold et al.
patent: 5041895 (1991-08-01), Contiero et al.
patent: 5237481 (1993-08-01), Soo et al.
patent: 5457419 (1995-10-01), Tihanyi
patent: 5677558 (1997-10-01), McGlinchey

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