Field controlled thyristor with dual resistivity field layer

Details Field controlled thyristor with dual resistivity field layer Field controlled thyristor with dual resistivity field layer

1978-06-01

1980-09-16

Clawson, Jr., Joseph E.

357 20, 357 38, 357 55, 357 59, 357 64, H01L 2980

Patent

active

042233283

ABSTRACT:
A field controlled thyristor is disclosed which comprises a first emitter region exposed to one main surface of a semiconductor substrate and having a first conductivity type, a second emitter region exposed to the other main surface of the substrate and having a second conductivity type, a base region connecting the first and the second emitter region, and a gate region provided in the base region. The gate region consists of a slab-like first portion disposed parallel to both the emitter and a second portion connecting the first slab-like portion with one of the main surfaces of the semiconductor substrate. The impurity concentration of the base region is higher in the portion of the base region nearer to the emitter region having the same conductivity type as that of the base region than in the portion of the base region nearer to the emitter region having the opposite conductivity type to that of the base region. The field controlled thyristor has a high forward blocking voltage gain (anode-cathode voltage/gate bias voltage), a large current rating, and a high switching power capability and its switching time is very short.

REFERENCES:
patent: 3553536 (1971-01-01), Neilson
patent: 4037245 (1977-07-01), Ferro
patent: 4060821 (1977-11-01), Houston et al.
patent: 4132996 (1979-01-01), Baliga
patent: 4146906 (1979-03-01), Miyata et al.

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