Field controlled thyristor

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With extended latchup current level

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Details

257152, 257170, 257174, H01L 2974, H01L 29747

Patent

active

053878051

ABSTRACT:
A readily manufacturable field controlled thyristor with a first semiconductor region of n-type conductivity, a second semiconductor region of p-type in contact with said first region, a void penetrating through said first and second semiconductor regions, a fourth semiconductor region of n-type forming a channel adjacent to said void, a fifth semiconductor region, of p-type, in contact with said third region. The device has a large tolerance for deviations in process parameter precision and accuracy, which enables the device to be produced at a low cost.

REFERENCES:
patent: 4502070 (1985-02-01), Leipold et al.
patent: 5202750 (1993-04-01), Gough

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