Field-controlled high-power semiconductor devices

Details Field-controlled high-power semiconductor devices Field-controlled high-power semiconductor devices

1998-06-10

2000-08-22

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257139, 257147, 257110, 257133, 257134, H01L 29745, H01L 2978

Patent

active

06107649&

ABSTRACT:
Power semiconductor devices have a plurality of semiconductor layers of alternating p-type and n-type conductivity and top and bottom device surfaces. A layer of the top surface forms a control layer. A semiconductor layer junction, remote from top and bottom device surfaces, forms a blocking p-n junction capable of sustaining the applied device voltage. A top ohmic contact overlays a top conductive region extending from the top surface into the control layer. A conductive tub region, spaced apart from the top conductive region, extends from the top surface at least through the control layer. A field effect region is disposed in the control layer between the top conductive region and tub region. A gate contact is formed over the field effect region causing the creation and interruption of a conductive channel between the top conductive region and the conductive tub region so as to turn the device on and off. In one device embodiment, a separate latch-on gate overlying the conductive tub is provided for device turn-on.

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