Field controlled diode (FCD) having MOS trench gates

Details Field controlled diode (FCD) having MOS trench gates Field controlled diode (FCD) having MOS trench gates

1989-10-02

1991-02-19

Hille, Rolf

357 22, 357 234, H01L 2974, H01L 2980, H01L 2978

Patent

active

049948830

ABSTRACT:
A field controlled diode is provided with an insulated gate electrode for controlling the conductivity of the diode. The diode is turned off by applying a gate bias voltage which pinches off the drift region of the device to block current flow in the anode/cathode diode path. The turn-off characteristics of the device are enhanced by including transistor portions in the structure in which the drift region is not pinched off during turn-off to facilitate extraction of stored charge from the diode structure.

REFERENCES:
patent: 4364072 (1982-12-01), Nishizawa
patent: 4571815 (1986-02-01), Baliga et al.
patent: 4587712 (1986-05-01), Baliga
patent: 4641174 (1987-02-01), Baliga
patent: 4799095 (1989-01-01), Baliga
patent: 4827321 (1989-05-01), Baliga

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