Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1995-06-30
1998-01-06
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 25, 327570, 330277, H01L 2988, H01L 29775
Patent
active
057058245
ABSTRACT:
A carrier transport media is doped with impurities or includes barrier structures within or on the carrier transport media and a sinusoidally alternating external electric field(s) with frequencies equal to the Bloch frequency divided by an integer is applied to the carrier transport media to alter the effective barriers of the impurities or barrier structures to an arbitrarily large potential compared to the zero field barrier potential. The various impurities or barrier structures are band engineered and deposited, grown or implanted in the carrier transport media and can take any form such as barrier layers in or on the transport media, laterally induced barriers, and impurities or defects in the carrier transport media. The application of time-dependent external fields across a length of nanoscale or mesoscopic structure leads to an effective renominalization of the barrier potential strengths when the frequency of the applied electric field multiplied by an integer is equal to the Bloch frequency. Under these conditions the transmission probability is altered and the current ratio, i.sub.2 /i.sub.1, will be modulated strongly.
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Dutta Mitra
He Jun
Lafrate Gerald J.
Stroscio Michael A.
Anderson William H.
Jackson Jerome
Tereschuk George B.
The United States of America as represented by the Secretary of
Zelenka Michael
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