FFL/QFL FET logic circuits

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307448, 307475, 307542, 307544, 307450, H03K 19003, H03K 19017, H03K 19094, H03K 1704

Patent

active

050270079

ABSTRACT:
An FFL/QFL family of logic gates is disclosed, preferably implemented with GaAs MESFET devices and providing enhanced speed-power characteristics. Although a number of gate configurations are disclosed, a NOR gate 26 constructed in accordance with this invention includes a pair of normally OFF input transistors Q1 and Q7, which receive inputs A and B. Current sources Q2 and Q3 couple the transistors to the supply voltage V.sub.DD and ground, respectively. A control transistor Q6 is also coupled to the input and source transistors. An output section 30 responds to the combined operation of transistors Q1, Q2, Q3, Q6, and Q7 to produce an output C in accordance with conventional NOR logic. More particularly, upon application of a high logic input A or B to transistors Q1 and/or Q7, transistors Q1 and/or Q7 and Q6 turn ON and the output C is at a logic low level. If both inputs A and B are low, however, transistors Q1, Q6, and Q7 remain OFF, and the output C is at a high logic level. Use of the control transistor Q6 allows smaller input transistors Q1 and Q7 and current source Q3 to be used, increasing the integration level and gate speed via decreased capacitance.

REFERENCES:
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patent: 4896057 (1990-01-01), Yang et al.
Tomasetta, L. R., Processing Advances Push GaAs ICs to Higher VLSI Levels, EDN, Jun. 9, 1988 (pp. 243-248).

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