FET With heterojunction induced channel

Details FET With heterojunction induced channel FET With heterojunction induced channel

1984-03-05

1985-08-27

Larkins, William D.

357 15, 357 16, H01L 2980, H01L 29205

Patent

active

045381658

ABSTRACT:
The mobility of carriers in the channel region of a field effect transistor can be increased by providing a layered structure wherein electrons are separated from impurities. The channel is made up of external layers of wide bandgap material and internal layers with a narrower bandgap where the bottom of the conduction band of one layer is below the top of the valence band of the adjacent layer. A structure is shown with a layered channel having AlSb external layers and at least one or both of InAs and GaSb internal layers.

REFERENCES:
patent: 4163237 (1979-07-01), Dingle et al.
patent: 4173763 (1979-11-01), Chang et al.
patent: 4236165 (1980-11-01), Kawashima et al.
patent: 4236166 (1980-11-01), Cho et al.
patent: 4250515 (1981-02-01), Esaki et al.
patent: 4424525 (1984-01-01), Mimura
Ohno et al., "Double Heterostructure Ga.sub.0.47 In.sub.0.53 As MESFETs by MBE*", IEEE Electron Device Letters, vol. EDL-1, No. 8, Aug. 1980, pp. 154-155.
T. Mimura et al., Jap. Jour. of Applied Physics, vol. 19, No. 5, May 1980, pp. L225-L227, "A New Field Effect Transistor with Selectively Doped GaAs
Al.sub.x Ga.sub.1-x As Heterojunctions".
Appl. Phys. Lett. 33(7), Oct. 1, 1978, p. 665, "Electron Mobilities in Modulation-Doped Semiconductor Heterojunction Superlattices" by R. Dingle et al.
IBM Technical Disclosure Bulletin, vol. 22, No. 7, Dec. 1979, p. 2952, GaSb-InAs-GaSb p-n-p Heterojunction Transistors For Ultra-High Speeds" by C. A. Chang et al.
Solid State Communications, vol. 39, pp. 79-82, Pergamon Press Ltd. 1981.
J. Vac. Sci. Technol., 19(3), Sep./Oct. 1981, pp. 589-591.

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