Fet sensor with specially configured gate electrode for the...

Chemistry: molecular biology and microbiology – Apparatus – Including measuring or testing

Reexamination Certificate

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Details

C435S285200, C436S518000, C436S524000

Reexamination Certificate

active

07632670

ABSTRACT:
Disclosed is a sensor comprising a substrate, a source contact region, a drain contact region, and the gate oxide of a transistor. A gate electrode is disposed between the gate oxide and a detection electrode made of a nonconducting material. The contact area Asensbetween the gate electrode and the detection electrode is larger than the contact area Agatebetween the gate electrode and the gate oxide, whereby the receptor can be immobilized on the surface of the detection electrode in a technically simple manner while the small contact area Agatebetween the gate electrode and the transistor provides for high sensitivity for detecting the analyte. According to the inventive method for detecting at least one analyte, at least one analyte is brought into contact with a receptor immobilized at the detection electrode so as to modify the electrical charge at the surface of the detection electrode. The analyte is detected by detecting the modified voltage in the transistor.

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