Electricity: measuring and testing – Determining nonelectric properties by measuring electric... – Semiconductors for nonelectrical property
Patent
1990-09-28
1992-08-11
Wieder, Kenneth A.
Electricity: measuring and testing
Determining nonelectric properties by measuring electric...
Semiconductors for nonelectrical property
324450, 204416, G01N 27414
Patent
active
051382512
ABSTRACT:
An FET sensor apparatus comprising a sensor, a base member, and a support. The sensor comprises a semiconductor substrate having a predetermined crystal plane, a field-effect transistor formed on the semiconductor substrate, and a gate portion arranged on at least one of the major surfaces of the semiconductor substrate. The base member has a through hole in which the field-effect transistor is fitted. The support supports the sensor in the through hole in watertight fashion, with said gate portion exposed through an end of the hole.
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Koshiishi Kiyozou
Shinohara Etsuo
Brown Glenn W.
Olympus Optical Co,. Ltd.
Wieder Kenneth A.
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