FET radiation monitor

Details FET radiation monitor FET radiation monitor

2010-03-09

2011-12-20

Porta, David (Department: 2884)

Radiant energy

Invisible radiant energy responsive electric signalling

Semiconductor system

Reexamination Certificate

active

08080805

ABSTRACT:
A semiconductor device includes a semiconductor substrate; a buried insulator layer disposed on the semiconductor substrate, the buried insulator layer configured to retain an amount of charge in a plurality of charge traps in response to a radiation exposure by the semiconductor device; a semiconductor layer disposed on the buried insulating layer; a second insulator layer disposed on the semiconductor layer; a gate conducting layer disposed on the second insulator layer; and one or more side contacts electrically connected to the semiconductor layer. A method for radiation monitoring, the method includes applying a backgate voltage to a radiation monitor, the radiation monitor comprising a field effect transistor (FET); exposing the radiation monitor to radiation; determining a change in a threshold voltage of the radiation monitor; and determining an amount of radiation exposure based on the change in threshold voltage.

REFERENCES:
patent: 5103277 (1992-04-01), Caviglia et al.
patent: 5164805 (1992-11-01), Lee
patent: 5245191 (1993-09-01), Barber et al.
patent: 6043536 (2000-03-01), Numata et al.
patent: 6208535 (2001-03-01), Parks
patent: 6977989 (2005-12-01), Bothe et al.
patent: 2004/0094811 (2004-05-01), Takagi
patent: 2005/0040462 (2005-02-01), Koh
patent: 2005/0194633 (2005-09-01), Mori
patent: 2006/0231892 (2006-10-01), Furukawa et al.
patent: 2007/0184611 (2007-08-01), Oh et al.
patent: 2007/0190740 (2007-08-01), Furukawa et al.
patent: 2007/0275690 (2007-11-01), Hunter et al.
patent: 2008/0164528 (2008-07-01), Cohen et al.
patent: 2008/0290413 (2008-11-01), Mandelman et al.
patent: 2010/0027867 (2010-02-01), Bernhardt et al.
patent: 2010/0140488 (2010-06-01), Visconti et al.
Annamalai et al., “Radiation response of silicon on diamond devices,”, 1993, IEEE Transactions on Nuclear Science, vol. 40, No. 6, pp. 1780-1786.
Schwank et al., “BUSFET—A radiation-hardened SOI transistor,” 1999, IEEE Transaction on Nuclear Science, vol. 46, No. 6, pp. 1909-1816.
Shaneyfelt, et al., An Embeddable SOI Radiation Sensor, IEEE Transactions on Nuclear Science, Dec. 2009, pp. 3372-3380, vol. 56, No. 6, IEEE.

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