Patent
1986-03-20
1989-03-21
Carroll, J.
357 16, 357 30, 357 61, 357 63, H01L 2980, H01L 29161, H01L 2714
Patent
active
048148369
ABSTRACT:
A photoconductor comprising an optically sensitive FET in which an abrupt heterojunction (18) is inserted in the channel (11) at a certain distance from the gate contact (16). This provides a potential barrier (17, FIG. 4) in the valence band that accumulates minority carriers (carriers of the lower mobility type) and controls their release. A gate bias resistor which is conventionally used in a receiver circuit including the FET is no longer required, instead the potential barrier height determines the time constant and a response comparable in length with an input optical pulse is achieved. This overcomes the problems of integrated manufacture, and slow response, associated with the large value of the bias resistor which is needed to reduce noise.
REFERENCES:
patent: 4213138 (1980-07-01), Campbell et al.
patent: 4323911 (1982-04-01), Campbell et al.
patent: 4424525 (1984-01-01), Mimura
patent: 4499481 (1985-02-01), Greene
patent: 4636829 (1987-01-01), Greenwood et al.
patent: 4734750 (1988-03-01), Okamura et al.
Ohno et al., "Double Heterostructure Ga.sub.0.47 In.sub.0.53 As MESFETs by BE", IEEE Electron Device Letters, vol. Edl-1, No., Aug. 1980.
Fowler et al., "Inverted Thin-Film Transistor", IBM Technical Disclosure Bulletin, vol. 11, No. 9, Feb. 1969.
Carroll J.
ITT Gallium Arsenide Technology Center A Division of ITT Corpora
Ngo Ngan Van
Twomey Thomas N.
Walsh Robert A.
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