Oscillators – With distributed parameter resonator – Parallel wire type
Patent
1983-01-18
1985-10-15
LaRoche, Eugene R.
Oscillators
With distributed parameter resonator
Parallel wire type
331107SL, 331115, 331116FE, 331117FE, H03B 504, H03B 518
Patent
active
045477507
ABSTRACT:
An FET oscillator wherein a bias circuit is connected to a drain of a field-effect transistor and a source circuit including a transmission line and a self-bias circuit is connected to a source of the transistor, so that the source is substantially open-circuited at an oscillation frequency and the field-effect transistor operates as a two-terminal (the gate and drain) element exhibiting a negative resistance, and wherein a resonant circuit is connected to the gate of the transistor. With the source circuit connected to the transistor source, the oscillator can have a high unloaded Q-value of Qo and a high externally-loaded Q-value of Q.sub.ext, whereby the oscillation frequency is stable. According to this oscillator, only a single bias circuit for the drain is required without the need of a bias circuit for the gate.
REFERENCES:
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patent: 4187476 (1980-02-01), Shinkawa et al.
patent: 4189688 (1980-02-01), Sechi et al.
patent: 4435688 (1984-03-01), Shinkawa et al.
patent: 4445097 (1984-04-01), Godart et al.
Wade, Paul C., "Say Hello To Power FET Oscillators", Microwaves, _Apr. '79, pp. 104-109.
Abe, H. et al., "Stabilized C-Band GaAs FET Oscillator", _Microwave Journal, Oct. '77, pp. 52-55.
Mitsui, Y. et al., "Design of GaAs MESFET Oscillator Using Large-_Signal S-Parameters, IEEE Transactions on Microwave Theory and Techniques, vol. MTT-25, No. 12, Dec. '77, pp. 981-984.
Hori Shigekazu
Soejima Tomohide
Torizuka Hideki
LaRoche Eugene R.
Mis D. C.
Tokyo Shibaura Denki Kabushiki Kaisha
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