Oscillators – Solid state active element oscillator – Transistors
Patent
1987-05-28
1988-11-15
Laroche, Eugene R.
Oscillators
Solid state active element oscillator
Transistors
H03B 500
Patent
active
047852631
ABSTRACT:
A Ga As FET oscillator includes an FET having gate-drain and source connections. A tuned circuit is connected to the FET gate. Bias voltage is supplied to the FET. A parallel-connected resistor and capacitor is connected to the FET source. A Schottky diode is connected across the FET gate-source junction and the parallel connected resistor and capacitor, with its anode connected to the FET gate and its cathode connected to the resistor and capacitor. The Schottky diode limits the positive voltage across the gate-source junction of the Ga As FET to prevent gate-source current flow.
REFERENCES:
patent: 3421111 (1969-01-01), Boyajian
patent: 3723905 (1973-03-01), Sterner et al.
patent: 4193046 (1980-03-01), Chiba
patent: 4438351 (1984-03-01), Schuermeyer
patent: 4553110 (1985-11-01), Kleinberg
patent: 4580109 (1986-04-01), Lockwood
patent: 4609884 (1986-09-01), Kindinger et al.
"The Radio Amateur's Handbook", 1982, fifty-ninth edition.
UHF Syntor Synthesizer, schematic diagram.
Enderby Ralph T.
Irwin James S.
Kaltenecker Robert S.
Stengel Robert E.
LaRoche Eugene R.
Motorola Inc.
Nichols Daniel K.
Pascal Robert J.
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