FET optical receiver using backside illumination, indium materia

Details FET optical receiver using backside illumination, indium materia FET optical receiver using backside illumination, indium materia

1994-07-14

1996-07-02

Picardat, Kevin M.

Fishing, trapping, and vermin destroying

437 3, 437 6, 437209, 437912, 148DIG135, H01L 3118

Patent

active

055321739

ABSTRACT:
A photo FET device having a large area backside optical energy reception surface is disclosed. The photo FET device is fabricated in the source gate and drain upward configuration using a lattice determining surrogate substrate and a mesa-forming deep etch processing sequence and then inverted onto a new permanent substrate member and the surrogate substrate member removed in order to expose the active area backside optical energy reception surface. Fabrication of the device from two possible indium-inclusive semiconductor materials and a particular gate metal alloy is also disclosed.

REFERENCES:
patent: 4532536 (1985-07-01), Hatanaka et al.
patent: 4625226 (1986-11-01), Antell
patent: 4678542 (1987-07-01), Boer et al.
patent: 4990489 (1991-02-01), Elhamamsy et al.
patent: 5008213 (1991-04-01), Kolesar, Jr.
patent: 5130259 (1992-07-01), Bahraman
patent: 5138145 (1992-08-01), Nakamura et al.
patent: 5141878 (1992-08-01), Benton et al.
patent: 5180681 (1993-01-01), Mishra et al.
patent: 5204278 (1993-04-01), Imamura et al.
patent: 5252852 (1993-10-01), Makiuchi et al.
USAF Invention Disclosure: Packaging Process for Long Wavelength Backside Illuminated Photo-Transistor Receiver, pp. 2-3. No Date.
E. A. Martin, K. Vaccaro, W. Waters, S. Spaziani, and J. P. Lorenzo, Processing and Design Techniques for InGaAs/InAlAs/InP Photo FETs and MSMs, Mar. 1994, pp. 347-350.
"Light-Induced Effects in GaAs F.E.T.S." by J. Graffeuil et al, Electronics Letters vol. 15 No. 14, 5 Jul. 1979.
"Potential of CCDs for UV and X-ray plasma diagnostics" by J. R. Jamesick et al Review of Scientific Instruments 56(5), May 1985.
"Picosecond HEMT Photodetector" by T. Umeda et al Japanese Journal of Applied Science, vol. 25 No. 10, Oct. 1986.
Effect of Signal-Modulated Optical Radiation on the Characteristics of a Modfet by H. Mitra et al Applied Physics A56, 335-341 (1993).

Affiliated with

Also associated with

Rating

FET optical receiver using backside illumination, indium materia does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with FET optical receiver using backside illumination, indium materia, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and FET optical receiver using backside illumination, indium materia will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1506124