FET Memory cell structure and process

Details FET Memory cell structure and process FET Memory cell structure and process

1980-07-03

1983-08-09

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576W, 29580, 156647, 148187, 148188, 357 14, 357 23, H01L 21225

Patent

active

043970753

ABSTRACT:
A dense, vertical MOS FET memory cell has a high charge storage capacitance per unit area of substrate surface. The charge storage capacitor structure is formed within a well etched in the silicon semiconductor substrate by a combination of reactive ion etching and a self-limiting wet etch.

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