Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1976-09-16
1978-02-07
Anagnos, Larry N.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307205, 307213, 307304, 357 23, 357 41, 357 42, H03K 1908, H03K 1940, H01L 2708, H01L 2978
Patent
active
040728684
ABSTRACT:
An insulated Gate Field Effect Transistor (IGFET) static inverter having an improved load line characteristic is disclosed. The inverter comprises an enhancement mode IGFET active device in a first portion of a semiconductor substrate, having its drain connected to an output node, its source connected to a source potential and its gate connected to an input signal source. The first portion of the substrate is connected to a first substrate potential. A depletion mode IGFET load device is located in a second portion of the semiconductor substrate which is electrically isolated from the first portion. The depletion mode load device has its drain connected to a drain potential and its source, gate and the second portion of the semiconductor substrate all connected to the output node. In this manner, the rise in the source-to-substrate voltage bias during the turn-off transition is eliminated in the depletion mode load device, providing an improved load current characteristic for the inverter. Alternate embodiments are disclosed directed to an all N-channel inverter, an all P-channel inverter, and a complementary inverter consisting of a P-channel load device and an N-channel active device.
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Anantha, "Simultaneously Forming Memory & Support Circuits Using FETS"; IBM Tech. Discl., Bull.; vol. 16, No. 49, 1973; pp. 1037-1038.
Lehman et al., "Formation of Depletion & Enhancement Mode FETS"; IBM Tech. Discl., Bull.; vol. 8, No. 4, 9/1965; pp. 675-676.
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De La Moneda Francisco H.
Kotecha Harish N.
Anagnos Larry N.
Hoel John E.
International Business Machines - Corporation
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