Oscillators – With distributed parameter resonator – Parallel wire type
Patent
1992-07-14
1994-09-06
Grimm, Siegfried H.
Oscillators
With distributed parameter resonator
Parallel wire type
257275, 257365, 257693, 257703, 331117D, 331117FE, 455318, 455325, H03B 518, H04B 126
Patent
active
053451945
ABSTRACT:
A FET comprising two or more gate pads or terminals, and a reflection type oscillator including the above-mentioned FET. In this oscillator, a dielectric resonator is connected through a coupling line to the first gate pad of the FET and an output terminal is connected to the second pad. When the drain pad of the FET is connected to ground, and a suitable value of capacitive reactance is added to the source pad, then a negative resistance -R appears on the first gate pad, and thus oscillation occurs at a resonance frequency fo of the dielectric resonator. If the load resistance value viewed from the second gate pad is set to R, the maximum oscillation output occurs. Accordingly this oscillator enables to set the oscillation conditions between the source and gate pads of the FET, and the output matching conditions between the second gate pad and the output terminal separately, and thus allows to set the oscillation conditions and the output matching conditions, respectively, simultaneously to the optimum values.
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"Ka-Band FET Oscillator", Ashok K. Talwar, IEEE Transactions on Microwave Theory and Techniques, pp. 731-734, Aug. 1985.
Shinikawa, et al., "SHF Converter Formed on a Single Teflon Fiberglass Substrate for Satellite TV Broadcasting", Institute of Television Engineers of Japan, Technical Report (RE83-40), pp. 7-11 (1983).
Grimm Siegfried H.
NEC Corporation
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