Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1995-10-18
1997-04-29
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330296, H03F 316
Patent
active
056253230
ABSTRACT:
An FET gate bias circuit having a Schottky barrier gate incorporated therein is provided which can prevent gate voltage variations and thus provide a high-performance, high-reliability GaAs FET amplifier. The FET gate bias circuit includes a PNP transistor having a collector connected to a negative power supply, an NPN transistor having a collector thereof grounded and an emitter connected to the emitter of the PNP transistor, a Schottky barrier gate FET having a source grounded and a gate connected to the node between the emitters of the PNP transistor and NPN transistor, and a base voltage applying circuit for applying predetermined base voltages to the respective bases of the PNP transistor and NPN transistor.
Fujitsu Limited
Mullins James B.
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