FET driver circuit with mask programmable transition rates

Details FET driver circuit with mask programmable transition rates FET driver circuit with mask programmable transition rates

1985-02-25

1987-01-06

Anagnos, Larry N.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307475, 307263, 307268, 307468, 307246, 307473, H03K 512, H03K 17693, H03K 19092, H03K 19094

Patent

active

046348930

ABSTRACT:
A field effect transistor driver circuit figured to have different rates of change of the output signal depending on fabrication mask designation of selected transistors to be either depletion or enhancement type devices.

REFERENCES:
patent: 4103189 (1978-07-01), Perlegos et al.
patent: 4300213 (1981-11-01), Tanimura et al.
patent: 4386286 (1983-05-01), Kuo
patent: 4408305 (1983-10-01), Kuo
patent: 4503518 (1985-03-01), Iwahashi

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