FET Controlled Triac

Details FET Controlled Triac FET Controlled Triac

1981-05-21

1984-09-11

James, Andrew J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 23, 357 43, 357 51, 357 86, 307252B, H01L 29747, H01L 2978, H01L 2702, H03K 1760

Patent

active

044713720

ABSTRACT:
Bidirectional thyristor or Triac, including a semiconductor body, first and second antiparallel-connected thyristor sections integrated in the semiconductor body, each of the thyristor sections having an anode side, a cathode side, an emitter zone on the cathode side, a base zone on the cathode side, an emitter zone on the anode side having a given conductivity type, and a base zone on the anode side, a field-effect transistor being integrated into the semiconductor body and having a control, a source, and a drain terminal defining a load path, the source terminal being connected to the emitter zone on the cathode side of the first thyristor section and the drain terminal being connected to the base zone on the anode side forming a connection through the load path of the field-effect transistor, an auxiliary zone having the given conductivity type of the emitter zone on the anode side of the second thyristor section, the auxiliary zone being disposed between the emitter zone on the cathode side of the first thyristor section and the emitter zone on the anode side of the second thyristor section, and a contact disposed on the auxiliary zone for connection to a control current source.

REFERENCES:
patent: 3360696 (1967-12-01), Neilson et al.
patent: 3995176 (1976-11-01), Sauvanet
patent: 4199774 (1980-04-01), Plummer
patent: 4244000 (1981-01-01), Ueda et al.
patent: 4302687 (1981-11-01), Yoshino et al.
patent: 4331884 (1982-05-01), Suedberg
patent: 4331914 (1982-05-01), Huber
H. Eng., "The Field Effect Controlled Switch", Jul. 1970, Microelectronics, vol. 3, #7, pp. 36-38.

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